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IRLML6402TRPBF

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Manufacturer No:

IRLML6402TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLML6402TRPBF

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

IRLML6402TRPBF

Description:

IRLML6402TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 247

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IRLML6402TRPBF Description


IRLML6402TRPBF is a kind of P-channel MOSFETs that are designed based on the advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6402TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.


IRLML6402TRPBF Features


Thermal resistance
Power dissipation
Fast switching speed  
Ruggedized device design
Available in the standard SOT-23 package with the industry's smallest footprint


IRLML6402TRPBF Applications


Portable electronics
PCMCIA cards
Applications
where PCB space is at a premium
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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
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Western Union charge US$0.00 banking fee.

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DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLML6402TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRLML6402TRPBF.

  • Type
    Parameter
    Select All
  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    65m Ω @ 3.7A, 4.5V

  • Vgs(th) (Max) @ Id

    1.2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    633pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    12nC @ 5V

  • Rise Time

    48ns

  • Fall Time (Typ)

    381 ns

  • Gate to Source Voltage (Vgs)

    12V

  • Drain to Source Breakdown Voltage

    -20V

  • Dual Supply Voltage

    -20V

  • Nominal Vgs

    -550 mV

  • Current - Continuous Drain (Id) @ 25°C

    3.7A Ta

  • Drain to Source Voltage (Vdss)

    20V

  • Pulsed Drain Current-Max (IDM)

    22A

  • Drive Voltage (Max Rds On,Min Rds On)

    2.5V 4.5V

  • Vgs (Max)

    ±12V

  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2005

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Length

    3.0226mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    -3.7A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Additional Feature

    HIGH RELIABILITY

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • REACH SVHC

    No SVHC

  • Height

    1.12mm

  • Width

    1.397mm

  • Resistance

    65mOhm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Voltage - Rated DC

    -20V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Manufacturer Package Identifier

    Micro3

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Number of Channels

    1

  • Subcategory

    Other Transistors

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.3W

  • Turn On Delay Time

    350 ns

  • Threshold Voltage

    -550mV

  • Power Dissipation-Max

    1.3W Ta

  • Continuous Drain Current (ID)

    -3.7A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    588 ns

  • Transistor Element Material

    SILICON

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