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IRFB4115PBF

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Manufacturer No:

IRFB4115PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB4115PBF

Package:

TO-220-3

Datasheet:

IRFB4115PBF

Description:

MOSFET N-CH 150V 104A TO220AB

Quantity:

In Stock : 9484

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Product Details

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Product Description: IRFB4115PBF


The IRFB4115PBF is an N-channel Power MOSFET manufactured by Infineon Technologies. It is part of the HEXFET® series and is designed to deliver high performance in various power applications that demand low on-state resistance and efficient switching.


Description:

The IRFB4115PBF is an N-channel Power MOSFET with a TO-220AB through-hole package, providing excellent thermal performance and ease of installation. It utilizes advanced HEXFET technology, which results in low on-resistance and fast switching characteristics.


Features:


High Current Handling: The IRFB4115PBF MOSFET is capable of handling high continuous drain currents, making it suitable for power applications that require significant power delivery.


Low On-Resistance: This MOSFET features a low on-state resistance (RDS(on)), which reduces conduction losses and improves efficiency in high-power applications.


Fast Switching: The MOSFET exhibits fast switching characteristics, minimizing switching losses and enhancing overall system performance.


Avalanche Rated: The IRFB4115PBF is avalanche-rated, meaning it can withstand energy dissipation during avalanche breakdown without damage.


Logic Level Gate Drive: The MOSFET is designed to work efficiently with low-voltage gate drive, making it compatible with various logic level drive circuits.


RoHS Compliant: The IRFB4115PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental and safety standards.


Applications:

The IRFB4115PBF MOSFET is well-suited for a wide range of power applications that require high current handling, low on-state resistance, and efficient switching. Some common applications include:


Power Supplies: The IRFB4115PBF is used in power supply circuits to efficiently regulate output voltages.


Motor Control: It finds application in motor drive circuits for controlling the speed and direction of motors in various industrial and automotive systems.


Inverters: The MOSFET is employed in DC-AC inverters to convert DC power to AC power, commonly found in renewable energy systems and motor drives.


LED Lighting: The IRFB4115PBF is suitable for LED driver circuits, providing efficient current control for LED lighting applications.


Switching Circuits: It is used in various switching circuits, such as relay drivers and solenoid control.


Audio Amplifiers: The MOSFET can be utilized in high-power audio amplifiers for high-fidelity audio reproduction.


In summary, the IRFB4115PBF is a high-performance N-channel Power MOSFET with low on-state resistance, high current handling, and fast switching characteristics. Its versatile features make it an excellent choice for a wide range of power applications, including power supplies, motor control, inverters, LED lighting, and switching circuits.


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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

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Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB4115PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB4115PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    2008

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Length

    10.668mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-220-3

  • REACH SVHC

    No SVHC

  • Height

    19.8mm

  • Width

    4.826mm

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~175°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    MATTE TIN OVER NICKEL

  • Peak Reflow Temperature (Cel)

    250

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    TO-220AB

  • Element Configuration

    Single

  • Power Dissipation

    380W

  • Turn On Delay Time

    18 ns

  • Threshold Voltage

    5V

  • Power Dissipation-Max

    380W Tc

  • Continuous Drain Current (ID)

    104A

  • Max Junction Temperature (Tj)

    175°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    41 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    11m Ω @ 62A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5270pF @ 50V

  • Gate Charge (Qg) (Max) @ Vgs

    120nC @ 10V

  • Rise Time

    73ns

  • Fall Time (Typ)

    39 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    150V

  • Dual Supply Voltage

    150V

  • Nominal Vgs

    5 V

  • Current - Continuous Drain (Id) @ 25°C

    104A Tc

  • Pulsed Drain Current-Max (IDM)

    420A

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

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