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  • IRLML2030TRPBF

IRLML2030TRPBF

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Manufacturer No:

IRLML2030TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLML2030TRPBF

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

IRLML2030TRPBF

Description:

IRLML2030TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 6000

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Product Details

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IRLML2030TRPBF Description


The Infineon Technologies IRLML2030TRPBF is from the StrongIRFET? power MOSFET family optimized for low RDS(on) and high current capability. IRLML2030TRPBF  is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.



IRLML2030TRPBF Features


  • Silicon optimized for applications switching below<100 kHz

  • Softer body-diode compared to previous silicon generation

  • Industry-standard surface-mount power package

  • Product qualification according to JEDEC standard



IRLML2030TRPBF Applicaions


  • DC switch

  • Load switch

  • Battery protection

  • SMPS


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4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

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DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLML2030TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRLML2030TRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2003

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Length

    3.0226mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • REACH SVHC

    No SVHC

  • Height

    1.016mm

  • Width

    1.397mm

  • Resistance

    100MOhm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Matte Tin (Sn)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    1.3W

  • Turn On Delay Time

    4.1 ns

  • Threshold Voltage

    1.7V

  • Power Dissipation-Max

    1.3W Ta

  • Recovery Time

    14 ns

  • Continuous Drain Current (ID)

    2.7A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    4.5 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    100m Ω @ 2.7A, 10V

  • Vgs(th) (Max) @ Id

    2.3V @ 25μA

  • Input Capacitance (Ciss) (Max) @ Vds

    110pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    1nC @ 4.5V

  • Rise Time

    3.3ns

  • Fall Time (Typ)

    2.9 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Nominal Vgs

    1.7 V

  • Drain Current-Max (Abs) (ID)

    2.2A

  • Current - Continuous Drain (Id) @ 25°C

    2.7A Ta

  • Pulsed Drain Current-Max (IDM)

    11A

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

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