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IRFS7534TRLPBF

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Manufacturer No:

IRFS7534TRLPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFS7534TRLPBF

Package:

TO-263-7, D2Pak (6 Leads + Tab)

Datasheet:

IRFS7534TRLPBF

Description:

MOSFET N CH 60V 195A D2PAK

Quantity:

In Stock : 8383

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Product Details

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Product Description: IRFS7534TRLPBF


The IRFS7534TRLPBF is a high-performance Power MOSFET designed by Infineon Technologies. It is part of the HEXFET® series and is optimized for various power applications that require low on-state resistance and high current-carrying capability.


Description:

The IRFS7534TRLPBF is an N-channel Power MOSFET with a D2PAK (TO-263) surface-mount package, providing excellent thermal performance and easy installation. It utilizes advanced HEXFET technology, offering low on-resistance and fast switching characteristics.


Features:


High Current Handling: The IRFS7534TRLPBF MOSFET can handle high continuous drain currents, making it suitable for power applications that require substantial power delivery.


Low On-Resistance: It features a low on-state resistance (RDS(on)), resulting in reduced conduction losses and improved efficiency in high-power applications.


Fast Switching: The MOSFET has fast switching characteristics, which helps in minimizing switching losses and improving overall system performance.


Avalanche Rated: The IRFS7534TRLPBF is avalanche-rated, meaning it can handle energy dissipation during avalanche breakdown without damage.


Low Gate Charge: It has a relatively low gate charge, allowing for efficient and rapid switching between the on and off states.


RoHS Compliant: The IRFS7534TRLPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental and safety standards.


Applications:

The IRFS7534TRLPBF MOSFET is well-suited for a wide range of power applications where high current, low on-state resistance, and efficient switching are critical. Some common applications include:


Switching Power Supplies: The IRFS7534TRLPBF is used in switch-mode power supplies (SMPS) to regulate output voltages efficiently.


Motor Control: It is employed in motor drive circuits for controlling the speed and direction of motors in various industrial and automotive applications.


Inverters: The MOSFET is used in DC-AC inverters to convert DC power to AC power, commonly found in renewable energy systems and motor drives.


Audio Amplifiers: The IRFS7534TRLPBF can be utilized in high-power audio amplifiers for high-fidelity audio reproduction.


Inductive Heating: It finds application in induction heating systems for efficient and controlled heating of metallic objects.


LED Lighting: The IRFS7534TRLPBF is suitable for LED driver circuits, providing efficient current control for LED lighting applications.


In summary, the IRFS7534TRLPBF is a high-performance N-channel Power MOSFET with low on-state resistance, high current handling, and fast switching characteristics. Its versatile features make it an excellent choice for a wide range of power applications, including power supplies, motor control, inverters, audio amplifiers, and LED lighting.


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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFS7534TRLPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFS7534TRLPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2013

  • Series

    HEXFET®, StrongIRFET™

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Length

    10.67mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Number of Pins

    3

  • Package / Case

    TO-263-7, D2Pak (6 Leads + Tab)

  • REACH SVHC

    No SVHC

  • Height

    4.83mm

  • Width

    9.65mm

  • Mounting Type

    Surface Mount

  • Weight

    3.949996g

  • Operating Temperature

    -55°C~175°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Turn On Delay Time

    20 ns

  • Threshold Voltage

    3.7V

  • Power Dissipation-Max

    294W Tc

  • Continuous Drain Current (ID)

    195A

  • Transistor Application

    SWITCHING

  • Drain-source On Resistance-Max

    0.0024Ohm

  • Turn-Off Delay Time

    118 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    2.4m Ω @ 100A, 10V

  • Vgs(th) (Max) @ Id

    3.7V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    10034pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    279nC @ 10V

  • Rise Time

    134ns

  • Fall Time (Typ)

    93 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Current - Continuous Drain (Id) @ 25°C

    195A Tc

  • Pulsed Drain Current-Max (IDM)

    944A

  • Avalanche Energy Rating (Eas)

    775 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    6V 10V

  • Vgs (Max)

    ±20V

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