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IRFB4110PBF

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Manufacturer No:

IRFB4110PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB4110PBF

Package:

TO-220-3

Datasheet:

IRFB4110PBF

Description:

IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 9280

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Product Details

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Product Description: IRFB4110PBF


The IRFB4110PBF is a high-performance power MOSFET designed by Infineon Technologies. It is part of the HEXFET® series and is optimized for use in various power applications where low on-state resistance and high current-carrying capability are crucial.


Description:

The IRFB4110PBF is a N-channel power MOSFET with a TO-220AB package, offering excellent thermal performance and ease of mounting. It is constructed using advanced HEXFET technology, which provides low on-resistance and fast switching characteristics.


Features:


High Current Handling: The IRFB4110PBF MOSFET can handle high continuous drain currents, making it suitable for power applications that require significant power delivery.


Low On-Resistance: It features a low on-state resistance (RDS(on)), resulting in reduced conduction losses and improved efficiency in high-power applications.


Fast Switching: The MOSFET has fast switching characteristics, which helps in minimizing switching losses and improving overall system performance.


Avalanche Rated: The IRFB4110PBF is avalanche-rated, meaning it can handle energy dissipation during avalanche breakdown without damage.


Low Gate Charge: It has a relatively low gate charge, which allows for efficient and rapid switching between the on and off states.


RoHS Compliant: The IRFB4110PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets the environmental and safety standards.


Applications:

The IRFB4110PBF MOSFET is well-suited for a wide range of power applications where high current, low on-state resistance, and efficient switching are critical. Some common applications include:


Switching Power Supplies: The IRFB4110PBF is used in switch-mode power supplies (SMPS) to regulate output voltages efficiently.


Motor Control: It is employed in motor drive circuits for controlling the speed and direction of motors in various industrial and automotive applications.


Inverters: The MOSFET is used in DC-AC inverters to convert DC power to AC power, commonly found in renewable energy systems and motor drives.


Audio Amplifiers: The IRFB4110PBF can be utilized in high-power audio amplifiers for high-fidelity audio reproduction.


Inductive Heating: It finds application in induction heating systems for efficient and controlled heating of metallic objects.


LED Lighting: The IRFB4110PBF is suitable for LED driver circuits, providing efficient current control for LED lighting applications.


In summary, the IRFB4110PBF is a high-performance N-channel power MOSFET with low on-state resistance, high current handling, and fast switching characteristics. Its versatile features make it an excellent choice for a wide range of power applications, including power supplies, motor control, inverters, audio amplifiers, and LED lighting.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB4110PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB4110PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    2008

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Length

    10.66mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    180A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-220-3

  • REACH SVHC

    No SVHC

  • Height

    16.51mm

  • Width

    4.826mm

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~175°C TJ

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    TO-220AB

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    370W

  • Turn On Delay Time

    25 ns

  • Threshold Voltage

    4V

  • Power Dissipation-Max

    370W Tc

  • Recovery Time

    75 ns

  • Continuous Drain Current (ID)

    180A

  • Transistor Application

    SWITCHING

  • Drain-source On Resistance-Max

    0.0045Ohm

  • Turn-Off Delay Time

    78 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    4.5m Ω @ 75A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    9620pF @ 50V

  • Gate Charge (Qg) (Max) @ Vgs

    210nC @ 10V

  • Rise Time

    67ns

  • Fall Time (Typ)

    88 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    100V

  • Dual Supply Voltage

    100V

  • Nominal Vgs

    4 V

  • Current - Continuous Drain (Id) @ 25°C

    120A Tc

  • Pulsed Drain Current-Max (IDM)

    670A

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

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