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BSC042NE7NS3GATMA1

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Manufacturer No:

BSC042NE7NS3GATMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSC042NE7NS3GATMA1

Package:

8-PowerTDFN

Description:

Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R

Quantity:

In Stock : 999

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Product Details

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Product Description: BSC042NE7NS3GATMA1


The BSC042NE7NS3GATMA1 is a high-performance Power MOSFET manufactured by Infineon Technologies. It is part of the CoolMOS™ series, which is designed to provide efficient and reliable switching characteristics for a wide range of power electronics applications.


Features:


Low On-State Resistance (RDS(on)): The BSC042NE7NS3GATMA1 MOSFET has a low RDS(on) value, resulting in reduced conduction losses and improved energy efficiency.


High Power Handling: This MOSFET is capable of handling high power levels, making it suitable for power electronics applications that require robust and efficient power switching.


Fast Switching Speed: The BSC042NE7NS3GATMA1 features fast switching characteristics, enabling efficient handling of high-frequency switching operations.


Avalanche Energy Rated: The MOSFET is designed to withstand avalanche energy, ensuring its reliability and safety during high-voltage transient conditions.


Enhanced Thermal Performance: The MOSFET comes with advanced thermal properties that allow it to efficiently dissipate heat, ensuring stable operation under high-power conditions.


High Breakdown Voltage: The BSC042NE7NS3GATMA1 has a high voltage rating, making it suitable for applications that require high-voltage switching.


RoHS Compliant: This MOSFET is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.


Applications:

The BSC042NE7NS3GATMA1 MOSFET finds applications in a wide range of power electronics applications that require efficient and reliable high-power switching. Some of the typical applications include:


Power Supplies: It is used in power supply circuits, including AC-DC converters and DC-DC converters, to improve energy efficiency and power handling capabilities.


Motor Drives: The MOSFET is employed in motor drive circuits for controlling and driving electric motors in industrial, automotive, and consumer applications.


Inverters: It finds applications in inverters used in renewable energy systems (e.g., solar inverters) and motor drives for converting DC power to AC power.


Switching Converters: The BSC042NE7NS3GATMA1 is used in various switching converter topologies like buck, boost, and flyback to efficiently regulate and convert voltage levels.


Uninterruptible Power Supplies (UPS): It is used in UPS systems to switch between mains power and battery backup during power outages.


LED Lighting: The MOSFET is employed in LED lighting applications to control the current flow and achieve high-efficiency lighting solutions.


Audio Amplifiers: It is used in high-power audio amplifiers to deliver high-quality audio signals with low distortion.


Industrial Automation: The BSC042NE7NS3GATMA1 is used in industrial automation equipment for switching and control applications.


In summary, the BSC042NE7NS3GATMA1 is a high-power MOSFET with low on-state resistance, fast switching speed, and enhanced thermal performance. It is well-suited for various power electronics applications, including power supplies, motor drives, inverters, and switching converters. With its reliable performance and efficient power handling, the BSC042NE7NS3GATMA1 contributes to the development of advanced and energy-efficient electronic systems.


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The following are some common countries' logistic time.

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From $40.00 basic shipping fee depend on zone and country.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSC042NE7NS3GATMA1

technical specifications, attributes, parameters and parts with similar specifications to BSC042NE7NS3GATMA1.

  • Type
    Parameter
    Select All
  • Power Dissipation

    2.5W

  • Turn On Delay Time

    14 ns

  • Max Dual Supply Voltage

    75V

  • Power Dissipation-Max

    2.5W Ta 125W Tc

  • Continuous Drain Current (ID)

    19A

  • Transistor Application

    SWITCHING

  • Drain-source On Resistance-Max

    0.0042Ohm

  • Turn-Off Delay Time

    34 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    4.2m Ω @ 50A, 10V

  • Vgs(th) (Max) @ Id

    3.8V @ 91μA

  • Input Capacitance (Ciss) (Max) @ Vds

    4800pF @ 37.5V

  • Gate Charge (Qg) (Max) @ Vgs

    69nC @ 10V

  • Rise Time

    17ns

  • Fall Time (Typ)

    9 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Current - Continuous Drain (Id) @ 25°C

    19A Ta 100A Tc

  • Pulsed Drain Current-Max (IDM)

    400A

  • Avalanche Energy Rating (Eas)

    220 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Factory Lead Time

    13 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2011

  • Series

    OptiMOS™

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

  • Number of Pins

    8

  • Package / Case

    8-PowerTDFN

  • Reach Compliance Code

    not_compliant

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Tin (Sn)

  • Terminal Position

    DUAL

  • Terminal Form

    FLAT

  • Pin Count

    8

  • JESD-30 Code

    R-PDSO-F5

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Case Connection

    DRAIN

  • Halogen Free

    Halogen Free

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