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  • SPD30P06PGBTMA1

SPD30P06PGBTMA1

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Manufacturer No:

SPD30P06PGBTMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-SPD30P06PGBTMA1

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

SPD30P06PGBTMA1

Description:

SPD30P06PGBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 5087

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Product Details

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Product Description: SPD30P06PGBTMA1


The SPD30P06PGBTMA1 is a Power MOSFET manufactured by Infineon Technologies. It is designed to deliver high-performance switching characteristics and is part of the OptiMOS™ P2 series. This MOSFET is specifically optimized for power electronics applications that require high power handling and efficiency.


Features:


High Power Handling: The SPD30P06PGBTMA1 MOSFET is capable of handling high power levels, making it suitable for power electronics applications that demand robust performance.


Low On-State Resistance (RDS(on)): This MOSFET has a low RDS(on) value, which results in reduced conduction losses and improved energy efficiency.


Fast Switching Speed: The SPD30P06PGBTMA1 features fast switching characteristics, enabling efficient handling of high-frequency switching operations.


Avalanche Energy Rated: The MOSFET is designed to withstand avalanche energy, ensuring its reliability and safety during high-voltage transient conditions.


Enhanced Thermal Performance: The MOSFET comes with advanced thermal properties that allow it to efficiently dissipate heat, ensuring stable operation under high-power conditions.


High Breakdown Voltage: The SPD30P06PGBTMA1 has a high voltage rating, making it suitable for applications that require high-voltage switching.


RoHS Compliant: This MOSFET is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental friendliness.


Applications:

The SPD30P06PGBTMA1 MOSFET finds applications in a wide range of power electronics applications that require efficient high-power switching. Some of the typical applications include:


Power Supplies: It is used in power supply circuits, including AC-DC converters and DC-DC converters, to improve energy efficiency and power handling capabilities.


Motor Drives: The MOSFET is employed in motor drive circuits for controlling and driving electric motors in industrial, automotive, and consumer applications.


Inverters: It finds applications in inverters used in renewable energy systems (e.g., solar inverters) and motor drives for converting DC power to AC power.


Switching Converters: The SPD30P06PGBTMA1 is used in various switching converter topologies like buck, boost, and flyback to efficiently regulate and convert voltage levels.


Uninterruptible Power Supplies (UPS): It is used in UPS systems to switch between mains power and battery backup during power outages.


LED Lighting: The MOSFET is employed in LED lighting applications to control the current flow and achieve high-efficiency lighting solutions.


Audio Amplifiers: It is used in high-power audio amplifiers to deliver high-quality audio signals with low distortion.


Industrial Automation: The SPD30P06PGBTMA1 is used in industrial automation equipment for switching and control applications.


In summary, the SPD30P06PGBTMA1 is a high-power MOSFET with low on-state resistance, fast switching speed, and enhanced thermal performance. It is well-suited for various power electronics applications, including power supplies, motor drives, inverters, and switching converters. With its reliable performance and efficient power handling, the SPD30P06PGBTMA1 contributes to the development of advanced and energy-efficient electronic systems.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

SPD30P06PGBTMA1

technical specifications, attributes, parameters and parts with similar specifications to SPD30P06PGBTMA1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    18 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    1999

  • Series

    SIPMOS®

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

  • Number of Pins

    3

  • Additional Feature

    AVALANCHE RATED

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Reach Compliance Code

    not_compliant

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~175°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Matte Tin (Sn)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Pin Count

    4

  • JESD-30 Code

    R-PSSO-G2

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Case Connection

    DRAIN

  • Halogen Free

    Not Halogen Free

  • Power Dissipation

    125W

  • Turn On Delay Time

    13 ns

  • Max Dual Supply Voltage

    -60V

  • Power Dissipation-Max

    125W Tc

  • Continuous Drain Current (ID)

    30A

  • Drain-source On Resistance-Max

    0.075Ohm

  • Turn-Off Delay Time

    30 ns

  • Transistor Element Material

    SILICON

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    75m Ω @ 21.5A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 1.7mA

  • Input Capacitance (Ciss) (Max) @ Vds

    1535pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    48nC @ 10V

  • Rise Time

    11ns

  • Fall Time (Typ)

    20 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Current - Continuous Drain (Id) @ 25°C

    30A Tc

  • Drain to Source Voltage (Vdss)

    60V

  • Avalanche Energy Rating (Eas)

    250 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

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