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IRLB8314PBF

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Manufacturer No:

IRLB8314PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLB8314PBF

Package:

TO-220-3

Datasheet:

IRLB8314PBF

Description:

IRLB8314PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 4826

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Product Details

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Product Description: IRLB8314PBF


The IRLB8314PBF is an N-channel Power MOSFET designed by Infineon Technologies. It is part of the HEXFET® series and is optimized for various power applications that require low on-state resistance and high current-carrying capability.


Description:

The IRLB8314PBF is an N-channel Power MOSFET with a TO-220AB through-hole package, providing excellent thermal performance and easy installation. It utilizes advanced HEXFET technology, offering low on-resistance and fast switching characteristics.


Features:


High Current Handling: The IRLB8314PBF MOSFET can handle high continuous drain currents, making it suitable for power applications that require substantial power delivery.


Low On-Resistance: It features a low on-state resistance (RDS(on)), resulting in reduced conduction losses and improved efficiency in high-power applications.


Fast Switching: The MOSFET has fast switching characteristics, which helps in minimizing switching losses and improving overall system performance.


Avalanche Rated: The IRLB8314PBF is avalanche-rated, meaning it can handle energy dissipation during avalanche breakdown without damage.


Logic Level Gate Drive: The MOSFET is designed to operate efficiently with low voltage gate drive, making it compatible with various logic level drive circuits.


RoHS Compliant: The IRLB8314PBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental and safety standards.


Applications:

The IRLB8314PBF MOSFET is well-suited for a wide range of power applications where high current, low on-state resistance, and efficient switching are critical. Some common applications include:


Power Supplies: The IRLB8314PBF is used in power supply circuits to regulate output voltages efficiently.


Motor Control: It is employed in motor drive circuits for controlling the speed and direction of motors in various industrial and automotive applications.


Inverters: The MOSFET is used in DC-AC inverters to convert DC power to AC power, commonly found in renewable energy systems and motor drives.


LED Lighting: The IRLB8314PBF is suitable for LED driver circuits, providing efficient current control for LED lighting applications.


Switching Circuits: It finds application in various switching circuits, such as relay drivers and solenoid control.


Audio Amplifiers: The MOSFET can be utilized in high-power audio amplifiers for high-fidelity audio reproduction.


In summary, the IRLB8314PBF is a high-performance N-channel Power MOSFET with low on-state resistance, high current handling, and fast switching characteristics. Its versatile features make it an excellent choice for a wide range of power applications, including power supplies, motor control, inverters, LED lighting, and switching circuits.


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The following are some common countries' logistic time.

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Payment Method

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Western Union charge US$0.00 banking fee.

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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLB8314PBF

technical specifications, attributes, parameters and parts with similar specifications to IRLB8314PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    2014

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • ECCN Code

    EAR99

  • RoHS Status

    ROHS3 Compliant

  • Number of Pins

    3

  • Package / Case

    TO-220-3

  • REACH SVHC

    No SVHC

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~175°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Threshold Voltage

    1.7V

  • Power Dissipation-Max

    125W Tc

  • Continuous Drain Current (ID)

    130A

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    2.4m Ω @ 68A, 10V

  • Vgs(th) (Max) @ Id

    2.2V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5050pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    60nC @ 4.5V

  • Current - Continuous Drain (Id) @ 25°C

    130A Tc

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

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