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  • IRF9310TRPBF

IRF9310TRPBF

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Manufacturer No:

IRF9310TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF9310TRPBF

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

IRF9310TRPBF

Description:

MOSFET P-CH 30V 20A 8-SOIC

Quantity:

In Stock : 8843

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Product Details

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Product Description: IRF9310TRPBF


The IRF9310TRPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by Infineon Technologies. This MOSFET is specifically designed for low-power switching applications, offering excellent performance and reliability.


Description:

The IRF9310TRPBF is an N-channel enhancement-mode MOSFET, meaning it operates in the enhancement mode and requires a positive gate voltage to turn on the transistor. It features a compact and robust TO-252 (DPAK) surface-mount package, which makes it suitable for space-constrained applications and facilitates efficient heat dissipation.


Features:


Low On-Resistance (RDS(on)): The IRF9310TRPBF exhibits low on-resistance, resulting in low conduction losses and improved efficiency in power switching applications.


Fast Switching Speed: The MOSFET offers fast switching characteristics, enabling efficient operation in high-frequency switching applications.


Low Gate Charge (Qg): It features a low gate charge, which allows for faster charging and discharging of the gate, contributing to reduced switching losses.


Low Input Capacitance (Ciss): The MOSFET has a low input capacitance, which helps in minimizing switching losses and improving overall efficiency.


Avalanche Rated: The IRF9310TRPBF is avalanche-rated, indicating its ability to handle energy spikes and transient conditions without damage.


RoHS Compliant: The MOSFET is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and safe to use in various applications.


Applications:

The IRF9310TRPBF is primarily used in low-power switching applications, where its fast switching speed, low on-resistance, and low gate charge make it ideal for various circuits. Some common applications include:


Power Supply Circuits: It is used in low-power DC-DC converters and voltage regulator circuits.


Motor Control: The IRF9310TRPBF can be employed in low-power motor control applications.


LED Lighting: It finds application in LED driver circuits and low-power LED lighting systems.


Portable Electronics: The MOSFET is suitable for use in battery-powered devices, such as smartphones, tablets, and portable audio players.


Load Switching: It can be used as a load switch to control power to various components in electronic systems.


Low-Power Switching Circuits: The IRF9310TRPBF is used in various low-power switching circuits that require efficient and reliable switching.


In summary, the IRF9310TRPBF is a low-power N-channel power MOSFET with fast switching speed, low on-resistance, and low gate charge. Its compact TO-252 (DPAK) package and excellent performance make it a versatile choice for a wide range of low-power switching applications. Whether in power supply circuits, motor control, LED lighting, or portable electronics, the IRF9310TRPBF plays a crucial role in enabling efficient and reliable operation.


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF9310TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF9310TRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2008

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Length

    4.9784mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Radiation Hardening

    No

  • Number of Pins

    8

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • REACH SVHC

    No SVHC

  • Height

    1.4986mm

  • Width

    3.9878mm

  • Resistance

    4.6MOhm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • JESD-30 Code

    R-PDSO-G3

  • Subcategory

    Other Transistors

  • Number of Elements

    1

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    2.5W

  • Turn On Delay Time

    25 ns

  • Threshold Voltage

    -1.8V

  • Power Dissipation-Max

    2.5W Ta

  • Continuous Drain Current (ID)

    -20A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    65 ns

  • Transistor Element Material

    SILICON

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    4.6m Ω @ 20A, 10V

  • Vgs(th) (Max) @ Id

    2.4V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5250pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    165nC @ 10V

  • Rise Time

    47ns

  • Fall Time (Typ)

    70 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    -30V

  • Nominal Vgs

    -1.8 V

  • Current - Continuous Drain (Id) @ 25°C

    20A Tc

  • Drain to Source Voltage (Vdss)

    30V

  • Avalanche Energy Rating (Eas)

    630 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

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