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2N7000TA
2N7000TA
598-2N7000TA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 500mA, 10V ±20V 50pF @ 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
In Stock : 999
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Product Details
Purchasing and Inquiry
2N7000TA Description
These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.
2N7000TA Features
? Low RDS High Density Cell Design (ON)
? Switches with voltage control for small signals
? Tough and Dependable
? High Current Saturation Capability
2N7000TA Applications
Switching applications
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Email for receiving inquiries: jindawei@hkjdwchip.com
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Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
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2N7000TA
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