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  • FQA11N90C

FQA11N90C

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Manufacturer No:

FQA11N90C

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FQA11N90C

Package:

TO-3P-3, SC-65-3

Datasheet:

FQA11N90C

Description:

FQA11N90C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 2000

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Product Details

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FQA11N90C Description


The FQA11N90C is a 900v N-channel QFET? enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology FQA11N90C has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQA11N90C is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.



FQA11N90C Features


  • 11A, 900V, RDS(on) = 1.1Ω(Max.) @VGS = 10 V, ID = 5.5A

  • Low gate charge ( Typ. 60nC)

  • Low Crss ( Typ. 23pF)

  • 100% avalanche tested

  • RoHS compliant



FQA11N90C Applications


  • Desktop PC

  • AC-DC Merchant Power Supply - Desktop PC

  • Switched Mode Power Supplies

  • Active Power Factor Correction (PFC)

  • Electronic Lamp Ballasts


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Payment Method

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East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

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UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FQA11N90C

technical specifications, attributes, parameters and parts with similar specifications to FQA11N90C.

  • Type
    Parameter
    Select All
  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    2007

  • Series

    QFET®

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Current Rating

    11A

  • Number of Pins

    3

  • Package / Case

    TO-3P-3, SC-65-3

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~150°C TJ

  • Voltage - Rated DC

    900V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Subcategory

    FET General Purpose Power

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300W

  • Power Dissipation-Max

    300W Tc

  • Continuous Drain Current (ID)

    11A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    130 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    1.1 Ω @ 5.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3290pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    80nC @ 10V

  • Rise Time

    130ns

  • Fall Time (Typ)

    85 ns

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    900V

  • Current - Continuous Drain (Id) @ 25°C

    11A Tc

  • Pulsed Drain Current-Max (IDM)

    44A

  • Avalanche Energy Rating (Eas)

    960 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

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