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NVR5198NLT1G

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Manufacturer No:

NVR5198NLT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NVR5198NLT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

NVR5198NLT1G

Description:

NVR5198NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 3000

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NVR5198NLT1G Description


NVR5198NLT1G is a type of N-channel logic-level power MOSFET provided by ON Semiconductor. It is able to minimize RDS (on) for low conduction losses and improved efficiency. It is available in the industry-standard surface-mount SOT?23 package for the purpose of space-saving. 



NVR5198NLT1G Features


  • Low RDS(on)

  • Low conduction losses

  • Improved efficiency

  • Available in the SOT?23 package 



NVR5198NLT1G Applications


  • Uninterruptible power supplies

  • Synchronous rectification

  • Switching applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NVR5198NLT1G

technical specifications, attributes, parameters and parts with similar specifications to NVR5198NLT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • ECCN Code

    EAR99

  • Subcategory

    FET General Purpose Powers

  • Technology

    MOSFET (Metal Oxide)

  • Pin Count

    3

  • Number of Channels

    1

  • Power Dissipation-Max

    900mW Ta

  • Element Configuration

    Single

  • Power Dissipation

    1.5W

  • Turn On Delay Time

    5 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    155m Ω @ 1A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    182pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    1.7A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    5.1nC @ 10V

  • Rise Time

    7ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    2 ns

  • Turn-Off Delay Time

    13 ns

  • Continuous Drain Current (ID)

    2.2A

  • Threshold Voltage

    2.5V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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