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  • FDN304P

FDN304P

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Manufacturer No:

FDN304P

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDN304P

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

FDN304P

Description:

FDN304P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 1262

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Product Details

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Product Description:

The FDN304P is a small-sized N-channel PowerTrench® MOSFET designed to offer high-performance switching capabilities in various electronic applications. With its compact design and reliable performance, this MOSFET is well-suited for applications that require efficient power switching and control.


Features:


N-Channel MOSFET: The FDN304P is an N-channel enhancement mode MOSFET, which means it can efficiently control current flow between its drain and source terminals.


Low On-Resistance: This MOSFET boasts low on-resistance, minimizing power losses during switching and enhancing energy efficiency.


Compact Package: The MOSFET is available in a compact SOT-23 package, allowing for space-efficient integration into various circuit designs.


High Power Density: Despite its small size, the FDN304P provides high power density due to its low on-resistance and efficient switching capabilities.


Low Gate Threshold Voltage: The MOSFET has a low gate threshold voltage, making it suitable for low-voltage applications and easy control.


Fast Switching: With its fast switching characteristics, the FDN304P is suitable for applications that require rapid switching cycles.


High-Speed Switching: The MOSFET's high-speed switching makes it suitable for use in switching converters, voltage regulators, and power management circuits.


Applications:


Power Switching: The FDN304P is commonly used as a power switch in various electronic devices, including portable electronics, consumer electronics, and industrial equipment.


Voltage Regulation: It can be used in voltage regulator circuits to efficiently control and manage power supply voltages.


DC-DC Converters: The MOSFET is employed in DC-DC converter circuits to regulate and convert voltage levels with minimal power loss.


Motor Control: It is utilized in motor control circuits for efficient switching and control of motor currents.


Battery Management: The FDN304P can be used in battery management systems to control the charging and discharging of batteries.


LED Drivers: It is suitable for driving LEDs, ensuring efficient current flow for optimal brightness.


Load Switching: The MOSFET can be used as a load switch to turn on or off various electronic loads.


Power Management: It finds applications in power management circuits, especially those requiring high-speed switching and efficient energy control.


In summary, the FDN304P N-channel PowerTrench® MOSFET offers a compact design, low on-resistance, and high-speed switching capabilities. It is commonly used in power switching, voltage regulation, DC-DC converters, motor control, battery management, LED drivers, load switching, and power management applications. Its reliable performance and efficient power handling make it a valuable component in various electronic systems that require effective power switching and control.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDN304P

technical specifications, attributes, parameters and parts with similar specifications to FDN304P.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 5 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2001

  • Series

    PowerTrench®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Length

    2.92mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    -2.4A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • REACH SVHC

    No SVHC

  • Height

    1.22mm

  • Width

    3.05mm

  • Resistance

    52MOhm

  • Mounting Type

    Surface Mount

  • Weight

    30mg

  • Operating Temperature

    -55°C~150°C TJ

  • Voltage - Rated DC

    -20V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Number of Channels

    1

  • Subcategory

    Other Transistors

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Turn On Delay Time

    15 ns

  • Threshold Voltage

    -800mV

  • Power Dissipation-Max

    500mW Ta

  • Continuous Drain Current (ID)

    2.4A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    40 ns

  • Transistor Element Material

    SILICON

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    52m Ω @ 2.4A, 4.5V

  • Vgs(th) (Max) @ Id

    1.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1312pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    20nC @ 4.5V

  • Rise Time

    15ns

  • Fall Time (Typ)

    15 ns

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    -20V

  • Dual Supply Voltage

    -20V

  • Nominal Vgs

    -800 mV

  • Current - Continuous Drain (Id) @ 25°C

    2.4A Ta

  • Drain to Source Voltage (Vdss)

    20V

  • Drive Voltage (Max Rds On,Min Rds On)

    1.8V 4.5V

  • Vgs (Max)

    ±8V

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