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  • FDMS7678

FDMS7678

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Manufacturer No:

FDMS7678

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMS7678

Package:

8-PowerTDFN

Datasheet:

FDMS7678

Description:

FDMS7678 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 2500

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Product Details

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FDMS7678 Description


FDMS7678 is a 30V  N-Channel Power Trench? MOSFET. The N-Channel MOSFET FDMS7678 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The onsemi FDMS7678 is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.



FDMS7678 Features


  • Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A

  • Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A

  • High-performance technology for extremely low RDS(on)

  • Termination is Lead-free

  • RoHS Compliant



FDMS7678 Applications


  • Notebook PC

  • Portable Devices

  • DC-DC Buck Converters

  • Notebook Battery Power Management

  • Load Switch in Notebook


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMS7678

technical specifications, attributes, parameters and parts with similar specifications to FDMS7678.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    26 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • Series

    PowerTrench®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Length

    5.1mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Radiation Hardening

    No

  • Number of Pins

    8

  • Package / Case

    8-PowerTDFN

  • REACH SVHC

    No SVHC

  • Height

    1.05mm

  • Width

    6.25mm

  • Mounting Type

    Surface Mount

  • Weight

    74mg

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Tin (Sn)

  • Terminal Position

    DUAL

  • Terminal Form

    FLAT

  • JESD-30 Code

    R-PDSO-F5

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    MO-240AA

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    41W

  • Turn On Delay Time

    10 ns

  • Threshold Voltage

    1.5V

  • Power Dissipation-Max

    2.3W Ta 41W Tc

  • Continuous Drain Current (ID)

    17.5A

  • Transistor Application

    SWITCHING

  • Drain-source On Resistance-Max

    0.0055Ohm

  • Turn-Off Delay Time

    26 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    5.5m Ω @ 17.5A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2410pF @ 15V

  • Gate Charge (Qg) (Max) @ Vgs

    39nC @ 10V

  • Rise Time

    4ns

  • Fall Time (Typ)

    3 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Nominal Vgs

    1.5 V

  • Drain Current-Max (Abs) (ID)

    26A

  • Current - Continuous Drain (Id) @ 25°C

    17.5A Ta 26A Tc

  • Pulsed Drain Current-Max (IDM)

    70A

  • Avalanche Energy Rating (Eas)

    54 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

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