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2N7002KT1G

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Manufacturer No:

2N7002KT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-2N7002KT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

2N7002KT1G

Description:

2N7002KT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 258

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Product Details

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Product Description:

The 2N7002KT1G is a small signal N-channel MOSFET transistor designed to provide efficient switching and amplification capabilities in various electronic circuits. With its compact size and reliable performance, this transistor is well-suited for applications where precise control of current flow and voltage switching is essential.


Features:


N-Channel MOSFET: The 2N7002KT1G is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET), allowing it to control the flow of current between the drain and source terminals.


Low Threshold Voltage: This transistor has a low threshold voltage, making it easy to turn on and off with a relatively low input voltage.


Small Form Factor: The compact SOT-23 surface-mount package makes it suitable for space-constrained circuit designs and automated assembly processes.


High Switching Speed: The transistor provides fast switching speeds, enabling it to quickly transition between on and off states.


Low ON-Resistance: It features a low ON-resistance, minimizing power losses when the transistor is in the conducting state.


RoHS Compliant: The transistor is compliant with the Restriction of Hazardous Substances (RoHS) directive, meeting environmental standards.


Applications:


Switching Circuits: The 2N7002KT1G transistor is commonly used in switching circuits to control the flow of current through various electronic components, such as LEDs, relays, and small motors.


Signal Amplification: It can be employed in amplifier circuits to amplify weak signals, such as those from sensors or microphones.


Level Shifting: The transistor can be used for level shifting applications, where it converts logic-level signals to higher or lower voltage levels.


Load Switching: It is suitable for load switching applications where low ON-resistance and efficient switching are required.


Voltage Regulation: The transistor can be used in voltage regulation circuits to control voltage levels in electronic systems.


Pulse Generation: It can be part of pulse generation circuits, producing precise pulses for various timing functions.


Analog Switching: The transistor can be used as an analog switch to control analog signals in various electronic systems.


Interface Circuits: It can be utilized in interface circuits to match different voltage levels between devices.


Battery-Powered Devices: The low threshold voltage and efficient switching characteristics make it suitable for battery-powered devices where power efficiency is crucial.


In summary, the 2N7002KT1G N-channel MOSFET transistor offers efficient switching and amplification capabilities in a compact package. Its low threshold voltage, small form factor, high switching speed, and low ON-resistance make it versatile for various applications, including switching circuits, signal amplification, load switching, voltage regulation, and more. Whether you're designing consumer electronics, industrial control systems, or battery-powered devices, this transistor provides reliable performance and precise control over current flow and voltage switching.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N7002KT1G

technical specifications, attributes, parameters and parts with similar specifications to 2N7002KT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    7 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Packaging

    Tape & Reel (TR)

  • Published

    2008

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Length

    3.04mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • REACH SVHC

    No SVHC

  • Height

    1.11mm

  • Width

    1.4mm

  • Resistance

    1.6Ohm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Surface Mount

    YES

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • Halogen Free

    Halogen Free

  • Element Configuration

    Single

  • Power Dissipation

    420mW

  • Turn On Delay Time

    12.2 ns

  • Threshold Voltage

    2.3V

  • Power Dissipation-Max

    350mW Ta

  • Continuous Drain Current (ID)

    380mA

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    55.8 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    1.6 Ω @ 500mA, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    24.5pF @ 20V

  • Gate Charge (Qg) (Max) @ Vgs

    0.7nC @ 4.5V

  • Rise Time

    9ns

  • Fall Time (Typ)

    9 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Nominal Vgs

    2.3 V

  • Current - Continuous Drain (Id) @ 25°C

    320mA Ta

  • Feedback Cap-Max (Crss)

    5 pF

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

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