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  • NDT3055L

NDT3055L

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Manufacturer No:

NDT3055L

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NDT3055L

Package:

TO-261-4, TO-261AA

Datasheet:

NDT3055L

Description:

NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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NDT3055L Description


The NDT3055L is an N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The onsemi NDT3055L is particularly suited for low voltage applications such as DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.



NDT3055L Features


  • In SOT-223-4 package

  • 4 A, 60 V.  RDS(ON)= 0.100 W @ VGS = 10 V,

                RDS(ON)= 0.120 W @ VGS = 4.5 V.

  • Low drive requirements allow operation directly from logic drivers. VGS(TH) < 2V.

  • High-density cell design for extremely low RDS(ON).

  • High power and current handling capability in a widely used surface mount package.


NDT3055L Applications


  • DC motor control 

  • DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed

  • Power Management 

  • Motor Drive & Control 

  • Automotive


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NDT3055L

technical specifications, attributes, parameters and parts with similar specifications to NDT3055L.

  • Type
    Parameter
    Select All
  • Voltage - Rated DC

    60V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Current

    32A

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Subcategory

    FET General Purpose Power

  • Voltage

    40V

  • Number of Elements

    1

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    3W

  • Turn On Delay Time

    5 ns

  • Threshold Voltage

    1.6V

  • Power Dissipation-Max

    3W Ta

  • Continuous Drain Current (ID)

    4A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    20 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    100m Ω @ 4A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    345pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    20nC @ 10V

  • Rise Time

    7.5ns

  • Fall Time (Typ)

    7 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    60V

  • Dual Supply Voltage

    60V

  • Nominal Vgs

    1.6 V

  • Current - Continuous Drain (Id) @ 25°C

    4A Ta

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2017

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    4

  • ECCN Code

    EAR99

  • Length

    6.5mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    3.5A

  • Radiation Hardening

    No

  • Number of Pins

    4

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Package / Case

    TO-261-4, TO-261AA

  • REACH SVHC

    No SVHC

  • Height

    1.6mm

  • Width

    6.7mm

  • Resistance

    100mOhm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -65°C~150°C TJ

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