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  • FDMS86300DC

FDMS86300DC

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Manufacturer No:

FDMS86300DC

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDMS86300DC

Package:

8-PowerTDFN

Datasheet:

FDMS86300DC

Description:

FDMS86300DC datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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Description


The FDMS86300DC is a POWERTRENCH? MOSFET, N-Channel, DUAL COOL? 56 80 V, 110 A, 3.1 mΩ. This N-Channel MOSFET is created utilizing the cutting-edge POWERTRENCH? process from Fairchild Semiconductor, which combines Shielded Gate technology. With the lowest rDS(on) and the best switching performance, possible thanks to incredibly low Junction-to-Ambient thermal resistance, advancements in silicon and DUAL COOL? packaging technologies have been integrated.



Features


  • High Performance Technology for Extremely Low rDS(on)

  • 100% UIL Tested

  • RoHS Compliant

  • DUAL COOL Top Side Cooling PQFN package

  • Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A

  • Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A



Applications


  • Telecom Secondary Side Rectification

  • High-End Server/Workstation Vcore Low Side

  • Synchronous Rectifier for DC/DC Converters

  • Automotive Electronics

  • As for Switching Devices in Electronic Control Units


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDMS86300DC

technical specifications, attributes, parameters and parts with similar specifications to FDMS86300DC.

  • Type
    Parameter
    Select All
  • Vgs(th) (Max) @ Id

    4.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    7005pF @ 40V

  • Gate Charge (Qg) (Max) @ Vgs

    101nC @ 10V

  • Rise Time

    25ns

  • Fall Time (Typ)

    9 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    80V

  • Nominal Vgs

    3.3 V

  • Drain Current-Max (Abs) (ID)

    60A

  • Current - Continuous Drain (Id) @ 25°C

    24A Ta 76A Tc

  • Pulsed Drain Current-Max (IDM)

    260A

  • Avalanche Energy Rating (Eas)

    240 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    8V 10V

  • Vgs (Max)

    ±20V

  • Factory Lead Time

    5 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    Dual Cool™, PowerTrench®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Length

    5.1mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Radiation Hardening

    No

  • Number of Pins

    8

  • Additional Feature

    ULTRA LOW RESISTANCE

  • Package / Case

    8-PowerTDFN

  • REACH SVHC

    No SVHC

  • Height

    1.05mm

  • Width

    5.85mm

  • Mounting Type

    Surface Mount

  • Weight

    90mg

  • Operating Temperature

    -55°C~150°C TJ

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Terminal Form

    FLAT

  • JESD-30 Code

    R-PDSO-F5

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    MO-240AA

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    3.2W

  • Turn On Delay Time

    29 ns

  • Threshold Voltage

    2.5V

  • Power Dissipation-Max

    3.2W Ta 125W Tc

  • Continuous Drain Current (ID)

    24A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    35 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    3.1m Ω @ 24A, 10V

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