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  • NDS331N

NDS331N

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Manufacturer No:

NDS331N

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NDS331N

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

NDS331N

Description:

NDS331N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 6312

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Product Details

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Product Description:

The NDS331N is an N-channel MOSFET transistor designed for high-performance switching applications. With its low on-resistance, fast switching speed, and robust construction, this MOSFET is well-suited for various electronic circuits where efficient switching and power management are crucial.


Features:


N-Channel Enhancement Mode: The NDS331N operates in the enhancement mode, allowing it to function as a switch by applying a positive gate-source voltage.


Low On-Resistance: This MOSFET features a low on-resistance, which results in minimal voltage drop across the transistor when it's in the fully conducting state. This property reduces power dissipation and improves overall efficiency.


Fast Switching Speed: The NDS331N offers fast switching characteristics, making it suitable for applications that require rapid transitions between on and off states.


High Current Handling: With its low on-resistance and robust construction, the MOSFET can handle relatively high current levels, making it suitable for power management applications.


Low Gate Threshold Voltage: The low gate threshold voltage enables the NDS331N to be easily controlled by low-level voltage signals, enhancing its versatility in various circuit configurations.


Surface-Mount Package: The NDS331N is available in a surface-mount DPAK package, allowing for easy integration onto printed circuit boards.


RoHS Compliant: The transistor is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental and safety standards.


Applications:


Switching Circuits: The NDS331N is commonly used as a switch in various electronic circuits, including power supplies, motor control, and LED drivers.


DC-DC Converters: It can be used in DC-DC converter circuits to efficiently regulate and manage voltage levels.


Motor Control: The MOSFET is suitable for motor control applications, where it can be used to drive and control the speed of DC motors.


LED Drivers: It can be employed in LED driver circuits to control the current flowing through LEDs for efficient illumination.


Power Management: The NDS331N can be integrated into power management circuits, such as voltage regulation and load switching.


Battery Protection: It can be used in battery protection circuits to prevent overcharging or overdischarging of batteries.


Inverter Circuits: The MOSFET can be used in inverter circuits to convert DC power to AC power in applications like solar inverters.


Audio Amplifiers: It can be employed in audio amplifier circuits for efficient power switching.


Automotive Electronics: The NDS331N can be used in automotive electronics, including power distribution and control circuits.


In summary, the NDS331N N-channel MOSFET offers low on-resistance, fast switching, and high current handling, making it a versatile component for various electronic applications. Whether you're designing power supplies, motor control circuits, LED drivers, or other power management systems, this MOSFET contributes to efficient switching and enhanced performance.


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Package

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Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
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NDS331N

technical specifications, attributes, parameters and parts with similar specifications to NDS331N.

  • Type
    Parameter
    Select All
  • Vgs(th) (Max) @ Id

    1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    162pF @ 10V

  • Gate Charge (Qg) (Max) @ Vgs

    5nC @ 4.5V

  • Rise Time

    25ns

  • Fall Time (Typ)

    5 ns

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    20V

  • Nominal Vgs

    700 mV

  • Current - Continuous Drain (Id) @ 25°C

    1.3A Ta

  • Drive Voltage (Max Rds On,Min Rds On)

    2.7V 4.5V

  • Vgs (Max)

    ±8V

  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Published

    1998

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Length

    2.92mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Current Rating

    1.3A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • REACH SVHC

    No SVHC

  • Height

    1.22mm

  • Width

    1.4mm

  • Resistance

    160mOhm

  • Mounting Type

    Surface Mount

  • Weight

    30mg

  • Operating Temperature

    -55°C~150°C TJ

  • Voltage - Rated DC

    20V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • JESD-609 Code

    e3

  • Terminal Finish

    Tin (Sn)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Turn On Delay Time

    5 ns

  • Threshold Voltage

    700mV

  • Power Dissipation-Max

    500mW Ta

  • Continuous Drain Current (ID)

    1.3A

  • Max Junction Temperature (Tj)

    150°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    10 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    160m Ω @ 1.5A, 4.5V

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