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MMBT5401M3T5G
MMBT5401M3T5G
598-MMBT5401M3T5G
SOT-723
MMBT5401M3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MMBT5401M3T5G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.
MMBT5401M3T5G Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 600mV @ 5mA, 50mA
MMBT5401M3T5G Applications
There are a lot of ON Semiconductor MMBT5401M3T5G applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
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MMBT5401M3T5G
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