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SMMBT5551LT1G
SMMBT5551LT1G
598-SMMBT5551LT1G
TO-236-3, SC-59, SOT-23-3
SMMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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SMMBT5551LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Input voltage breakdown is available at 160V volts.During maximum operation, collector current can be as low as 60mA volts.
SMMBT5551LT1G Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
SMMBT5551LT1G Applications
There are a lot of ON Semiconductor SMMBT5551LT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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SMMBT5551LT1G
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