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MMBT5551LT1G
MMBT5551LT1G
598-MMBT5551LT1G
TO-236-3, SC-59, SOT-23-3
MMBT5551LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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MMBT5551LT1G Description
The MMBT5551LT1G is an NPN Silicon High Voltage Transistor developed for applications that require specific site and control changes. According to the MMBT5551LT1G datasheet, this transistor is PPAP capable and AEC-Q101 qualified. The NPN Bipolar High Voltage Transistor is intended for general-purpose switching applications. The MMBT5551LT1G is packaged in a SOT-23 package, which is also intended for low-power surface mount applications.
MMBT5551LT1G Features
Pb?Free Devices are available
Collector-Emitter Breakdown Voltage 160 V
Miniature SOT-23 Surface Mount Package Saves Board Space>
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
MMBT5551LT1G Applications
Industrial
Automotive
Switching applications
Lower power surface mount applications
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MMBT5551LT1G
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