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BC846BLT1G

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Manufacturer No:

BC846BLT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-BC846BLT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

BC846BLT1G

Description:

BC846BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BC846BLT1G Description


The ON Semiconductor BC846BLT1G Transistor is a 65V NPN silicon Bipolar Transistor that is ideal for linear and switching applications. The device is appropriate for low-power surface-mount applications, ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic.



BC846BLT1G Features


  • 6V Emitter to base voltage (VEBO)

  • 556°C/W Thermal resistance, junction to ambient

  • Halogen-free/BFR-free

  • ESD rating - >4000V human body model, >400V machine model

  • 80V Collector to base voltage (VCBO)



BC846BLT1G Applications


  • Industrial

  • Power Management

  • Safety


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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BC846BLT1G

technical specifications, attributes, parameters and parts with similar specifications to BC846BLT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 6 days ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2005

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Type

    General Purpose

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    65V

  • Max Power Dissipation

    300mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    100mA

  • Frequency

    100MHz

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300mW

  • Transistor Application

    SWITCHING

  • Halogen Free

    Halogen Free

  • Gain Bandwidth Product

    100MHz

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    65V

  • Max Collector Current

    100mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    200 @ 2mA 5V

  • Current - Collector Cutoff (Max)

    15nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    600mV @ 5mA, 100mA

  • Collector Emitter Breakdown Voltage

    65V

  • Transition Frequency

    100MHz

  • Collector Emitter Saturation Voltage

    600mV

  • Max Breakdown Voltage

    65V

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    6V

  • hFE Min

    200

  • Noise Figure

    10 dB

  • Height

    940μm

  • Length

    2.9mm

  • Width

    1.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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