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  • MMBT2369LT1G

MMBT2369LT1G

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Manufacturer No:

MMBT2369LT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MMBT2369LT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

MMBT2369LT1G

Description:

MMBT2369LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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MMBT2369LT1G Overview


This device has a DC current gain of 40 @ 10mA 350mV, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 1mA, 10mA.Keeping the emitter base voltage at 4.5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Maximum collector currents can be below 200mA volts.

MMBT2369LT1G Features


the DC current gain for this device is 40 @ 10mA 350mV
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz

MMBT2369LT1G Applications


There are a lot of ON Semiconductor MMBT2369LT1G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MMBT2369LT1G

technical specifications, attributes, parameters and parts with similar specifications to MMBT2369LT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 3 days ago)

  • Contact Plating

    Tin

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Surface Mount

    YES

  • Number of Pins

    3

  • Weight

    4.535924g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2004

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    15V

  • Max Power Dissipation

    300mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    200mA

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    MMBT2369

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    300mW

  • Power - Max

    225mW

  • Transistor Application

    SWITCHING

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    15V

  • Max Collector Current

    200mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    40 @ 10mA 350mV

  • Current - Collector Cutoff (Max)

    400nA

  • Vce Saturation (Max) @ Ib, Ic

    250mV @ 1mA, 10mA

  • Collector Emitter Breakdown Voltage

    15V

  • Transition Frequency

    500MHz

  • Collector Emitter Saturation Voltage

    250mV

  • Max Breakdown Voltage

    15V

  • Collector Base Voltage (VCBO)

    40V

  • Emitter Base Voltage (VEBO)

    4.5V

  • hFE Min

    40

  • Height

    940μm

  • Length

    2.9mm

  • Width

    1.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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