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MMJT9410T1G
MMJT9410T1G
699-MMJT9410T1G
TO-261-4, TO-261AA
MMJT9410T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at HK JDW
In Stock : 999
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Product Details
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MMJT9410T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 800mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 300mA, 3A.In this part, there is a transition frequency of 72MHz.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
MMJT9410T1G Features
the DC current gain for this device is 85 @ 800mA 1V
the vce saturation(Max) is 450mV @ 300mA, 3A
a transition frequency of 72MHz
MMJT9410T1G Applications
There are a lot of Rochester Electronics, LLC MMJT9410T1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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MMJT9410T1G
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