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MJE13007G
MJE13007G
598-MJE13007G
TO-220-3
MJE13007G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MJE13007G Overview
This device has a DC current gain of 5 @ 5A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 2A, 8A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.14MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 8A volts.
MJE13007G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
MJE13007G Applications
There are a lot of ON Semiconductor MJE13007G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
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MJE13007G
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