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  • KSC1008COTA

KSC1008COTA

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Manufacturer No:

KSC1008COTA

Manufacturer:

ON Semiconductor

HK JDW NO:

598-KSC1008COTA

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

KSC1008COTA

Description:

KSC1008COTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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KSC1008COTA Overview


In this device, the DC current gain is 70 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 700mA.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 700mA volts.

KSC1008COTA Features


the DC current gain for this device is 70 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz

KSC1008COTA Applications


There are a lot of ON Semiconductor KSC1008COTA applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

KSC1008COTA

technical specifications, attributes, parameters and parts with similar specifications to KSC1008COTA.

  • Type
    Parameter
    Select All
  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    50MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    60V

  • Max Collector Current

    700mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    70 @ 50mA 2V

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    400mV @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    60V

  • Transition Frequency

    50MHz

  • Collector Emitter Saturation Voltage

    200mV

  • Collector Base Voltage (VCBO)

    80V

  • Emitter Base Voltage (VEBO)

    8V

  • hFE Min

    40

  • Radiation Hardening

    No

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Box (TB)

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    MATTE TIN

  • Voltage - Rated DC

    60V

  • Max Power Dissipation

    800mW

  • Terminal Position

    BOTTOM

  • Current Rating

    700mA

  • Frequency

    50MHz

  • Base Part Number

    KSC1008

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    800mW

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