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DSS3515M-7B
DSS3515M-7B
233-DSS3515M-7B
3-UFDFN
DSS3515M-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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DSS3515M-7B Overview
This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 500mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 340MHz is present in the part.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.
DSS3515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 340MHz
DSS3515M-7B Applications
There are a lot of Diodes Incorporated DSS3515M-7B applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
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DSS3515M-7B
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