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MMBT2222A-7-F
MMBT2222A-7-F
233-MMBT2222A-7-F
TO-236-3, SC-59, SOT-23-3
MMBT2222A-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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MMBT2222A-7-F Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 600mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.In this part, there is a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT2222A-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMBT2222A-7-F Applications
There are a lot of Diodes Incorporated MMBT2222A-7-F applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
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MMBT2222A-7-F
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