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MMBT3904-7-F
MMBT3904-7-F
233-MMBT3904-7-F
TO-236-3, SC-59, SOT-23-3
MMBT3904-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 1975
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MMBT3904-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.A collector emitter saturation voltage of 300mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Breakdown input voltage is 40V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.Collector current can be as low as 200mA volts at its maximum.
MMBT3904-7-F Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-23-3
MMBT3904-7-F Applications
There are a lot of Diodes Incorporated MMBT3904-7-F applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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MMBT3904-7-F
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