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FMMT493TA
FMMT493TA
233-FMMT493TA
TO-236-3, SC-59, SOT-23-3
FMMT493TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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FMMT493TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 250mA 10V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.The part has a transition frequency of 150MHz.There is a breakdown input voltage of 100V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.
FMMT493TA Features
the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT493TA Applications
There are a lot of Diodes Incorporated FMMT493TA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
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FMMT493TA
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