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  • FMMT459TA

FMMT459TA

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Manufacturer No:

FMMT459TA

Manufacturer:

Diodes Incorporated

HK JDW NO:

233-FMMT459TA

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

FMMT459TA

Description:

FMMT459TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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FMMT459TA Overview


This device has a DC current gain of 50 @ 30mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 90mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 90mV @ 6mA, 50mA.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As you can see, the part has a transition frequency of 50MHz.Breakdown input voltage is 450V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

FMMT459TA Features


the DC current gain for this device is 50 @ 30mA 10V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 90mV @ 6mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 50MHz

FMMT459TA Applications


There are a lot of Diodes Incorporated FMMT459TA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FMMT459TA

technical specifications, attributes, parameters and parts with similar specifications to FMMT459TA.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    15 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Weight

    7.994566mg

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    450V

  • Max Power Dissipation

    806mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    150mA

  • Frequency

    50MHz

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    FMMT459

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    806mW

  • Power - Max

    625mW

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    50MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    450V

  • Max Collector Current

    150mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    50 @ 30mA 10V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    90mV @ 6mA, 50mA

  • Collector Emitter Breakdown Voltage

    450V

  • Transition Frequency

    50MHz

  • Collector Emitter Saturation Voltage

    90mV

  • Max Breakdown Voltage

    450V

  • Collector Base Voltage (VCBO)

    500V

  • Emitter Base Voltage (VEBO)

    7V

  • Continuous Collector Current

    150mA

  • Height

    1mm

  • Length

    3.05mm

  • Width

    1.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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