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BC847CTT1G
BC847CTT1G
598-BC847CTT1G
SC-75, SOT-416
BC847CTT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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BC847CTT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC847CTT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CTT1G Applications
There are a lot of ON Semiconductor BC847CTT1G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
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BC847CTT1G
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