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ZXTPS717MCTA
ZXTPS717MCTA
233-ZXTPS717MCTA
8-VDFN Exposed Pad
ZXTPS717MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXTPS717MCTA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -10mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 310mV @ 150mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Parts of this part have transition frequencies of 110MHz.An input voltage of 12V volts is the breakdown voltage.The maximum collector current is 4A volts.
ZXTPS717MCTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -10mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7V
a transition frequency of 110MHz
ZXTPS717MCTA Applications
There are a lot of Diodes Incorporated ZXTPS717MCTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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ZXTPS717MCTA
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