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ZXTP25100BFHTA
ZXTP25100BFHTA
233-ZXTP25100BFHTA
TO-236-3, SC-59, SOT-23-3
ZXTP25100BFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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Product Details
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ZXTP25100BFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 2V DC current gain.A collector emitter saturation voltage of -215mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 295mV @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A breakdown input voltage of 100V volts can be used.Product comes in SOT-23-3 supplier package.The device has a 100V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 2A volts can be achieved.
ZXTP25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -215mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
the supplier device package of SOT-23-3
ZXTP25100BFHTA Applications
There are a lot of Diodes Incorporated ZXTP25100BFHTA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
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ZXTP25100BFHTA
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