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ZXTN619MATA
ZXTN619MATA
233-ZXTN619MATA
3-UDFN
ZXTN619MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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Product Details
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ZXTN619MATA Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 320mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 200mA, 4A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 165MHz.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 4A volts at its maximum.
ZXTN619MATA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 165MHz
ZXTN619MATA Applications
There are a lot of Diodes Incorporated ZXTN619MATA applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
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ZXTN619MATA
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