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ZXTN25020DZTA
ZXTN25020DZTA
233-ZXTN25020DZTA
TO-243AA
ZXTN25020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
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ZXTN25020DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 270mV @ 300mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.215MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.Maximum collector currents can be below 6A volts.
ZXTN25020DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 270mV @ 300mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 215MHz
ZXTN25020DZTA Applications
There are a lot of Diodes Incorporated ZXTN25020DZTA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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ZXTN25020DZTA
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