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ZXTN2011GTA
ZXTN2011GTA
233-ZXTN2011GTA
TO-261-4, TO-261AA
ZXTN2011GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXTN2011GTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 220mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 220mV @ 500mA, 5A.Continuous collector voltage should be kept at 6A for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 6A.As you can see, the part has a transition frequency of 130MHz.An input voltage of 100V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
ZXTN2011GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2011GTA Applications
There are a lot of Diodes Incorporated ZXTN2011GTA applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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ZXTN2011GTA
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