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ZXT2M322TA
ZXT2M322TA
233-ZXT2M322TA
3-PowerSMD, Flat Leads
ZXT2M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXT2M322TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 2A 2V.With a collector emitter saturation voltage of -240mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 350mA, 3.5A.Maintaining the continuous collector voltage at -3.5A is essential for high efficiency.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.This device has a current rating of -3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 20V volts.A maximum collector current of 3.5A volts can be achieved.
ZXT2M322TA Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 180MHz
ZXT2M322TA Applications
There are a lot of Diodes Incorporated ZXT2M322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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ZXT2M322TA
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