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ZXT1M322TA
ZXT1M322TA
233-ZXT1M322TA
3-PowerSMD, Flat Leads
ZXT1M322TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXT1M322TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2.5A 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.When VCE saturation is 300mV @ 150mA, 4A, transistor means Ic has reached transistors maximum value (saturated).A -4A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 7.5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.As a result, it can handle voltages as low as 12V volts.Collector current can be as low as 4A volts at its maximum.
ZXT1M322TA Features
the DC current gain for this device is 180 @ 2.5A 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 300mV @ 150mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 110MHz
ZXT1M322TA Applications
There are a lot of Diodes Incorporated ZXT1M322TA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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ZXT1M322TA
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