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ZXT10N15DE6TA
ZXT10N15DE6TA
233-ZXT10N15DE6TA
SOT-23-6
ZXT10N15DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZXT10N15DE6TA Overview
DC current gain in this device equals 300 @ 200mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 230mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 50mA, 4A.Continuous collector voltages should be kept at 4A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 120MHz.This device can take an input voltage of 15V volts before it breaks down.When collector current reaches its maximum, it can reach 4A volts.
ZXT10N15DE6TA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 260mV @ 50mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 120MHz
ZXT10N15DE6TA Applications
There are a lot of Diodes Incorporated ZXT10N15DE6TA applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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ZXT10N15DE6TA
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