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ZTX855STZ
ZTX855STZ
233-ZTX855STZ
E-Line-3
ZTX855STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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Product Details
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ZTX855STZ Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 210mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 260mV @ 400mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).There is a transition frequency of 90MHz in the part.The maximum collector current is 4A volts.
ZTX855STZ Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855STZ Applications
There are a lot of Diodes Incorporated ZTX855STZ applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
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ZTX855STZ
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