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ZTX603STOA
ZTX603STOA
233-ZTX603STOA
E-Line-3, Formed Leads
ZTX603STOA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at HK JDW
In Stock : 999
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ZTX603STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 1A 5V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX603STOA Features
the DC current gain for this device is 2000 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz
ZTX603STOA Applications
There are a lot of Diodes Incorporated ZTX603STOA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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ZTX603STOA
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