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TIP125G
TIP125G
598-TIP125G
TO-220-3
TIP125G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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TIP125G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 3V.A collector emitter saturation voltage of 2V ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 20mA, 5A.Continuous collector voltages should be kept at 5A to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP125G Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
TIP125G Applications
There are a lot of ON Semiconductor TIP125G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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TIP125G
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