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TIP121TU
TIP121TU
598-TIP121TU
TO-220-3
TIP121TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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TIP121TU Overview
In this device, the DC current gain is 1000 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 20mA, 5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
TIP121TU Features
the DC current gain for this device is 1000 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
TIP121TU Applications
There are a lot of ON Semiconductor TIP121TU applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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TIP121TU
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