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  • PN2222ABU

PN2222ABU

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Manufacturer No:

PN2222ABU

Manufacturer:

ON Semiconductor

HK JDW NO:

598-PN2222ABU

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

PN2222ABU

Description:

PN2222ABU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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PN2222ABU Description


PN2222ABU is a kind of NPN bipolar transistor designed for small signal general purpose and switching applications. It is one of the most widely used semiconductor devices in the integrated circuits. Moreover, it can also be used as a medium power amplifier and switching requiring collector currents up to 500 mA.

PN2222ABU Features


Small size
Light weight
High reliability
Low input impedance


PN2222ABU Applications


Radio and television
Household appliances
Electronic instruments
Automatic control devices
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

PN2222ABU

technical specifications, attributes, parameters and parts with similar specifications to PN2222ABU.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

  • Number of Pins

    3

  • Weight

    179mg

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    MKT-ZA03DREV3

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2007

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    40V

  • Max Power Dissipation

    625mW

  • Terminal Position

    BOTTOM

  • Current Rating

    500mA

  • Frequency

    300MHz

  • Base Part Number

    PN2222

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    625mW

  • Turn On Delay Time

    35 ns

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    300MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Turn-Off Delay Time

    250 ns

  • Collector Emitter Voltage (VCEO)

    40V

  • Max Collector Current

    600mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 150mA 10V

  • Current - Collector Cutoff (Max)

    10nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    1V @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    40V

  • Current - Collector (Ic) (Max)

    1A

  • Transition Frequency

    300MHz

  • Collector Emitter Saturation Voltage

    1V

  • Collector Base Voltage (VCBO)

    75V

  • Emitter Base Voltage (VEBO)

    6V

  • hFE Min

    40

  • Turn Off Time-Max (toff)

    285ns

  • Height

    5.33mm

  • Length

    5.2mm

  • Width

    4.19mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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