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NSVMMBT6520LT1G
NSVMMBT6520LT1G
598-NSVMMBT6520LT1G
TO-236-3, SC-59, SOT-23-3
NSVMMBT6520LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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NSVMMBT6520LT1G Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
NSVMMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 40MHz
NSVMMBT6520LT1G Applications
There are a lot of ON Semiconductor NSVMMBT6520LT1G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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NSVMMBT6520LT1G
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