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NJT4030PT1G
NJT4030PT1G
598-NJT4030PT1G
TO-261-4, TO-261AA
NJT4030PT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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NJT4030PT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In the part, the transition frequency is 160MHz.Single BJT transistor can be broken down at a voltage of 40V volts.During maximum operation, collector current can be as low as 3A volts.
NJT4030PT1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NJT4030PT1G Applications
There are a lot of ON Semiconductor NJT4030PT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
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NJT4030PT1G
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