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MPSW13RLRAG
MPSW13RLRAG
598-MPSW13RLRAG
TO-226-3, TO-92-3 Long Body (Formed Leads)
MPSW13RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MPSW13RLRAG Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Continuous collector voltages should be kept at 1A to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 125MHz in the part.A maximum collector current of 1A volts is possible.
MPSW13RLRAG Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 125MHz
MPSW13RLRAG Applications
There are a lot of ON Semiconductor MPSW13RLRAG applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
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MPSW13RLRAG
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