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MPSA05RLRA

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Manufacturer No:

MPSA05RLRA

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MPSA05RLRA

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Datasheet:

MPSA05RLRA

Description:

MPSA05RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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MPSA05RLRA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).As a result, the part has a transition frequency of 100MHz.A maximum collector current of 500mA volts can be achieved.

MPSA05RLRA Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MPSA05RLRA Applications


There are a lot of ON Semiconductor MPSA05RLRA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MPSA05RLRA

technical specifications, attributes, parameters and parts with similar specifications to MPSA05RLRA.

  • Type
    Parameter
    Select All
  • Lifecycle Status

    OBSOLETE (Last Updated: 2 days ago)

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Surface Mount

    NO

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2007

  • JESD-609 Code

    e0

  • Pbfree Code

    no

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn80Pb20)

  • HTS Code

    8541.21.00.95

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    60V

  • Max Power Dissipation

    625mW

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    240

  • Reach Compliance Code

    not_compliant

  • Current Rating

    500mA

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    MPSA05

  • Pin Count

    3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Element Configuration

    Single

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    100MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    250mV

  • Max Collector Current

    500mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 10mA 1V

  • Current - Collector Cutoff (Max)

    100nA

  • Vce Saturation (Max) @ Ib, Ic

    250mV @ 10mA, 100mA

  • Collector Emitter Breakdown Voltage

    60V

  • Transition Frequency

    100MHz

  • Collector Emitter Saturation Voltage

    250mV

  • Collector Base Voltage (VCBO)

    60V

  • Emitter Base Voltage (VEBO)

    4V

  • hFE Min

    100

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

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