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MPS8099RLRMG
MPS8099RLRMG
598-MPS8099RLRMG
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
MPS8099RLRMG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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MPS8099RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Emitter base voltages of 4V can achieve high levels of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 150MHz.When collector current reaches its maximum, it can reach 500mA volts.
MPS8099RLRMG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRMG Applications
There are a lot of ON Semiconductor MPS8099RLRMG applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
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MPS8099RLRMG
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